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SUMMARY:Promotionsvortrag Lena Bergmann\, Electrical characterization 
 of point defects in silicon high voltage diodes
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DESCRIPTION:Power semiconductors are essential for building efficient 
 power systems and are part of applica-tions such as drives and tractio
 n applications. High-voltage silicon (Si) diodes are key compo-nents\,
  and their efficiency can be enhanced by introducing point defects. Su
 bstitutional platinum (Pt)\, for instance\, is a powerful tool for min
 ority carrier lifetime control\, which reduces switching losses and in
 creases diode efficiency. For device optimization\, a comprehensive un
 derstanding of how different process parameters affect the Pt concentr
 ation and distribution is required\, ne-cessitating advanced methods f
 or characterizing point defects across the entire substrate of power s
 emiconductors. To address this\, a newly developed high-voltage Curren
 t Transient Spectroscopy (HV-IDLTS) setup was introduced. This techniq
 ue enables precise\, non-destructive defect characterization and has b
 een employed to investigate the effects of damage implantations on the
  distribution of Pt and platinum-hydrogen (PtH) defects in 1.2kV Si di
 odes. In industrially fabricated HV semiconductors\, defect concentrat
 ions can exceed the doping con-centration\, where the traditional I-DL
 TS model is no longer valid. To overcome this\, a new I-DLTS model has
  been developed\, accounting for trap charges and a time-dependent Fer
 mi energy. Combined with the HV-IDLTS setup\, this approach enables a 
 precise analysis of point defects in power semiconductors\, paving the
  way for improved optimization and higher device efficiency. (Vortrag 
 auf Englisch) Dem Vortrag schließt sich eine Diskussion von 15 Minute
 n an. Vortrag und Diskussion sind öffentlich. Diesen Verfahrensteilen
  folgt ein nicht öffentliches Rigorosum von 45 Minuten.
DTSTART:20250430T140000Z
DTEND:20250430T144500Z
LOCATION:Physikum A3\, SR 00.103
DTSTAMP:20260419T064539Z
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