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SUMMARY:Promotionsvortrag André Hochreiter\, On-Chip Mechanics as a C
 ontribution to the 4H-SiC Technology Platform (English)
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 000000100000004291CB1E37564142B77136E7F2289A23
DESCRIPTION:Vortragender André Hochreiter Ort Hörsaal F (Staudtstr. 
 5) Uhrzeit 15:00 Uhr (s.t.) Titel On-Chip Mechanics as a Contribution 
 to the 4H-SiC Technology Platform Abstract Silicon carbide&#8217\;s (S
 iC) combination of high-quality single-crystalline 4H-SiC wafers and i
 ts exceptional mechanical properties form an outstanding set of possib
 le applications. To fully leverage these mechanical properties\, this 
 thesis introduces a monolithic fabrication strategy that forms the des
 ired 3D-structures monolithically out of the single-crystal wafer. Thi
 s approach diverges from traditional dry-etching methods by relying on
  a sophisticated electrochemical etching (ECE) process. By leveraging 
 ion-implanted doping contrasts\, the ECE selectively removes p-SiC whi
 le preserving n-SiC\, resulting in a free-standing\, essentially stres
 s-free n-SiC layer for high-quality nanomechanical resonators such as 
 cantilevers\, bridges\, and membranes. A central contribution of this 
 work is the precise adjustment of 4H-SiC resonator properties achieved
  by applying controlled tensile stress through a chip-bending method u
 sing the squeezable nanojunction (SNJ) setup. We achieve a 2.6-fold in
 crease in the first eigenfrequency (f1: 540 kHz to 1400 kHz) and a fiv
 e-fold boost in the quality factor (Q) of a 110&#215\;10 µm bridge re
 sonator under 228 MPa of applied stress. This research validates the E
 uler-Bernoulli beam (EBB) model\, using experimental laser Doppler vib
 rometer (LDV) measurements of the first eigenfrequency\, against COMSO
 L simulations. To further validate the SNJ setup performance\, chip-be
 nding simulations (COMSOL) are compared against white light interferom
 etry measurements. Overall\, experimental and theoretical results alig
 n within 13% across all metrics: mechanical deformation\, eigenfrequen
 cy\, and tensile stress &#8211\; the latter calculated via the EBB mod
 el using LDV-measured f1 data. These results establish the SNJ method 
 as a fully reversible post-fabrication degree of freedo
DTSTART:20260506T130000Z
DTEND:20260506T143000Z
LOCATION:Hörsaal F / Lecture hall F\, Staudtstr. 5
DTSTAMP:20260427T224114Z
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