Silicon carbide (SiC) appears in different crystal structures, so-called polytypes. Based on its superior physical properties, this semiconductor is suited for high power electronic devices being able to operate also under harsh environmental conditions.
At the Chair of Applied Physics, SiC single crystals and SiC devices are investigated by electrical and optical analysis methods. In particular, we focus on electrical and optical properties of defects, which can purposefully be engineered by process technologies like ion implantation, oxidation, etc. We develop new methodology to gain improved access to the metal-semiconductor contact and underlying defects via transparent graphene electrodes.
We intensely collaborate with a number of local and international research institutes and also with semiconductor companies.
The proposal targets the simultaneous electrical and optical characterization of colour centers, in particular intrinsic defects, in Silicon carbide (SiC). For their targeted generation we develop a methodology that combines ion implantation and optimized annealing such that smallest defect concentrations underneath the SiC (0001) surface can be reached with the ultimate goal of access to single defects. The (0001) surface will be equipped with epitaxially grown electrodes, such that a space charge…
The main scientific objective of NetFISiC (ITN Marie Curie action) is to provide Silicon carbide material (of various polytypes) with improved and adequate functional interfaces for getting a step forward in electronic devices performance. Research efforts will be dedicated to solve the problems faced by important devices like MOSFET and Schottky diodes. Besides, some fundamental research will be performed both on the growth aspect and on new and innovating devices. Applications in high temperature,…
The aim of MANSiC project is to promote and structure a multidisciplinary training network for young researchers based on the challenging and promising development of 3C-SiC technology. Indeed, this cubic polytype of SiC was for long set apart due to the lack of adequate substrate so that the heteroepitaxial layers were far from device quality. Despite the recent availability of commercial 3C-SiC crystals, originally grown on Si, the defect density is still too high so that the blocking performances…
Bottom-gated epitaxial graphene
In: Nature Materials 10 (2011), p. 357-360
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Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics
In: Nature Communications 3 (2012), p. 957
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Doping of 4H-SiC with group IV elements
In: Materials Science Forum 858 (2016), p. 301
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