The Chair of Applied Physics operates two ion implanters for energies from 10 keV to 350 keV and 450 keV to 2 MeV. Several different ion sources (Penning source, sputter source, evaporator) allow a broad spectrum of elements of the periodic table to be used. We employ ion implantation for doping of semiconductors and for intentional generation of crystal damage in materials. Samples can be heated up to 900°C during implantation.
We can perform in-situ electrical measurements during implantation using a specially designed cryostat (temperature range: 4 K up to room temperature).
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