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  1. Friedrich-Alexander-Universität
  2. Naturwissenschaftliche Fakultät
  3. Department Physik
Friedrich-Alexander-Universität Chair of Applied Physics
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    • Silicon carbide and Epitaxial Graphene: Electronic Properties
    • Silicon Carbide and Epitaxial Graphene: Light/Matter Interfaces
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Silicon carbide and Epitaxial Graphene: Electronic Properties

In page navigation: Research (Weber)
  • Silicon carbide and Epitaxial Graphene: Electronic Properties
    • Monolithic electronic circuits based on epitaxial graphene
    • Promoting and structuring a Multidisciplinary Academic-Industrial Network through the heteropolytype growth, characterisation and applications of 3C-SiC on hexagonal substrates
    • Graphene on SiC: Fabrication, electronic structure and transistor applications
    • Interaction effects and gateless patterning in epitaxial graphene on silicon carbide (0001)
    • Training NETwork on Functional Interfaces for SiC
  • Silicon Carbide and Epitaxial Graphene: Light/Matter Interfaces
  • Molecular Materials: Electronic Properties
  • Molecular Materials: Light/Matter Interface
  • Research Data Management

Silicon carbide and Epitaxial Graphene: Electronic Properties

Contact

Weber, Heiko B.

Prof. Dr. Heiko B. Weber

  • Phone number: +49 9131 85-28421
  • Email: heiko.weber@fau.de
Krieger, Michael

Dr. Michael Krieger, Akad. ORat

  • Phone number: +49 9131 85-28427
  • Email: michael.krieger@fau.de

2MV-Beschleuniger zur Implantation von Punktdefekten

Due to its outstanding physical properties, silicon carbide (SiC) is suitable as a semiconductor material for high-performance devices that can operate under extreme conditions (high electrical voltage, high electrical power, high temperatures, ...). Graphene, which is an atomically thin layer of the carbon material graphite, is as a metal also one of the outstandingly robust materials. We grow it on the surface of silicon carbide.
We investigate the novel metallic properties of graphene, the semiconductor properties of SiC (especially the influence of defects and dopants) and the combined metal/semiconductor system. For our experiments, we fabricate custom devices ourselves. We continue to exploit the outstanding properties of SiC for novel functionalities beyond electronics.

In doing so, we successfully collaborate with various regional and international research institutions, but also with industrial companies.


Projects

Term: since December 1, 2013
Funding source: DFG-Einzelförderung / Sachbeihilfe (EIN-SBH)
Project leader: Heiko B. Weber

We propose a concept to build electronic devices and circuits employing the material system "epitaxial graphene on SiC". This material system consists of graphene, silicon carbide, and the epitaxially defined interface in between. We have already demonstrated the functionality of a single transistor that used the semiconductor as channel and consequently displayed excellent on/off ratios, in contrast to pure graphene transistors. Moreover, the usage of graphene as contact material delivers superior…

→ More information

Participating Scientists

  • Heiko B. Weber
  • Michael Krieger

Publications

  • Hauck M., Lehmeyer J., Pobegen G., Weber HB., Krieger M.:
    An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
    In: Communications Physics 2 (2019), p. 5
    ISSN: 2399-3650
    DOI: 10.1038/s42005-018-0102-8
    BibTeX: Download
  • Shallcross S., Sharma S., Weber HB.:
    Anomalous Dirac point transport due to extended defects in bilayer graphene
    In: Nature Communications 8 (2017), p. 342
    ISSN: 2041-1723
    DOI: 10.1038/s41467-017-00397-8
    URL: https://www.nature.com/articles/s41467-017-00397-8
    BibTeX: Download
  • Kißlinger F., Ott C., Heide C., Kampert E., Butz B., Spiecker E., Shallcross S., Weber HB.:
    Linear magnetoresistance in mosaic-like bilayer graphene
    In: Nature Physics 11 (2015), p. 650-+
    ISSN: 1745-2473
    DOI: 10.1038/NPHYS3368
    BibTeX: Download
  • Butz B., Dolle C., Niekiel F., Weber K., Waldmann D., Weber HB., Meyer B., Spiecker E., Spiecker E.:
    Dislocations in bilayer graphene
    In: Nature 505 (2014), p. 533-537
    ISSN: 0028-0836
    DOI: 10.1038/nature12780
    BibTeX: Download
  • Hertel S., Waldmann D., Jobst J., Albert A., Albrecht M., Krieger M., Reshanov S., Schöner A., Weber HB.:
    Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics
    In: Nature Communications 3 (2012), p. 957
    ISSN: 2041-1723
    DOI: 10.1038/ncomms1955
    BibTeX: Download

Lehrstuhl für Angewandte Physik
Friedrich-Alexander-Universität Erlangen-Nürnberg

Staudtstr. 7 / Bau A3
91058 Erlangen
Germany
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