Untersuchungen von Farbzentren im elektrischen Feld
We have been working for many years with the semiconductor material silicon carbide (SiC) and with epitaxial graphene on its surface. This material system has ideal properties to enable conceptually new interfaces between light and matter. Examples of the questions we are working on are: Can we develop devices for light-driven electronics? Can we build devices that are sensitive in the Terahertz (THz) spectral range? Can we harness single point defects in SiC for quantum communication and quantum sensing? Can we develop SiC into a technology platform for quantum technology?
Projects
Funding source: Deutsche Forschungsgemeinschaft (DFG)
Project leader:
The proposal targets the simultaneous electrical and optical characterization of colour centers, in particular intrinsic defects, in Silicon carbide (SiC). For their targeted generation we develop a methodology that combines ion implantation and optimized annealing such that smallest defect concentrations underneath the SiC (0001) surface can be reached with the ultimate goal of access to single defects. The (0001) surface will be equipped with epitaxially grown electrodes, such that a space cha…
Funding source: DFG / Sonderforschungsbereich / Transregio (SFB / TRR)
Project leader:
Individual point defects in solids are stable quantum systems often providing coherent electron spins and stable emission of single photons. Point defects in silicon carbide combine these advantages with a technologically mature semiconductor material platform. However, the solid-state environment leads to significant spreads in the transition frequencies of individual defects which mostly hinders observing cooperative effects. In this project, we address this challenge theoretically as well as…
Funding source: Bayerisches Staatsministerium für Wissenschaft und Kunst (StMWK) (seit 2018)
Acronym: QuMeCo
Project leader: , , , , , , , ,
Participating Scientists
Publications
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Light-field–driven electronics in the mid-infrared regime: Schottky rectification
In: Science Advances 8 (2022), Article No.: eabj5014
ISSN: 2375-2548
DOI: 10.1126/sciadv.abj5014
URL: https://www.science.org/doi/10.1126/sciadv.abj5014
BibTeX: Download - , , , , , :
Light-field control of real and virtual charge carriers
In: Nature 605 (2022), p. 251–255
ISSN: 0028-0836
DOI: 10.1038/s41586-022-04565-9
URL: https://www.nature.com/articles/s41586-022-04565-9
BibTeX: Download - , , , :
Stark Tuning of the Silicon Vacancy in Silicon Carbide
In: Nano Letters 20 (2020), p. 658-663
ISSN: 1530-6984
DOI: 10.1021/acs.nanolett.9b04419
URL: https://pubs.acs.org/doi/10.1021/acs.nanolett.9b04419
BibTeX: Download - , , , , , , :
Attosecond-fast internal photoemission
In: Nature Photonics 14 (2020), p. 219–222
ISSN: 1749-4885
DOI: 10.1038/s41566-019-0580-6
URL: https://arxiv.org/abs/2001.02989
BibTeX: Download - , , , :
An efficient Terahertz rectifier on the graphene/SiC materials platform
In: Scientific Reports 9 (2019), Article No.: 11205
ISSN: 2045-2322
DOI: 10.1038/s41598-019-47606-6
URL: https://www.nature.com/articles/s41598-019-47606-6
BibTeX: Download