Silicon Carbide and Epitaxial Graphene: Light/Matter Interfaces

Farbzentrum in der Einheitszelle von 4H-SiC

We have been working for many years with the semiconductor material silicon carbide (SiC) and with epitaxial graphene on its surface. This material system has ideal properties to enable conceptually new interfaces between light and matter. Examples of the questions we are working on are: Can we develop devices for light-driven electronics? Can we build devices that are sensitive in the Terahertz (THz) spectral range? Can we harness single point defects in SiC for quantum communication and quantum sensing? Can we develop SiC into a technology platform for quantum technology?


Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene

The proposal targets the simultaneous electrical and optical characterization of colour centers, in particular intrinsic defects, in Silicon carbide (SiC). For their targeted generation we develop a methodology that combines ion implantation and optimized annealing such that smallest defect concentrations underneath the SiC (0001) surface can be reached with the ultimate goal of access to single defects. The (0001) surface will be equipped with epitaxially grown electrodes, such that a space charge…

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Point defects in silicon carbide: Towards a platform for the coupling of light, spin and mechanics (B03)

Individual point defects in solids are stable quantum systems often providing coherent electron spins and stable emission of single photons. Point defects in silicon carbide combine these advantages with a technologically mature semiconductor material platform. However, the solid-state environment leads to significant spreads in the transition frequencies of individual defects which mostly hinders observing cooperative effects. In this project, we address this challenge theoretically as well as…

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