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  1. Friedrich-Alexander-Universität
  2. Faculty of Sciences
  3. Department of Physics
Friedrich-Alexander-Universität Chair of Applied Physics
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  4. Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene

Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene

In page navigation: Research (Weber)
  • Silicon carbide and Epitaxial Graphene: Electronic Properties
    • Monolithic electronic circuits based on epitaxial graphene
    • Promoting and structuring a Multidisciplinary Academic-Industrial Network through the heteropolytype growth, characterisation and applications of 3C-SiC on hexagonal substrates
    • Graphene on SiC: Fabrication, electronic structure and transistor applications
    • Interaction effects and gateless patterning in epitaxial graphene on silicon carbide (0001)
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  • Silicon Carbide and Epitaxial Graphene: Light/Matter Interfaces
    • Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene
    • Point defects in silicon carbide: Towards a platform for the coupling of light, spin and mechanics (B03)
  • Molecular Materials: Electronic Properties
    • Graphene and Organic Molecules: Transport Experiments (B08)
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  • Molecular Materials: Light/Matter Interface
    • Graphene and Organic Molecules: Transport Experiments (B08)
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Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene

Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene

(Third Party Funds Single)

Overall project:
Project leader: Heiko B. Weber
Project members: Michael Krieger
Start date: April 1, 2017
End date:
Acronym:
Funding source: Deutsche Forschungsgemeinschaft (DFG)
URL:

Abstract

The proposal targets the simultaneous electrical and optical characterization of colour centers, in particular intrinsic defects, in Silicon carbide (SiC). For their targeted generation we develop a methodology that combines ion implantation and optimized annealing such that smallest defect concentrations underneath the SiC (0001) surface can be reached with the ultimate goal of access to single defects. The (0001) surface will be equipped with epitaxially grown electrodes, such that a space charge region results, in which the defect can be electrostatically controlled. In particular, one can fill or deplete the defect at will. In connection with our patented epitaxial monolithic SiC/Graphene transistors, we will further optimize the Drain-current Deep-Level Transient Spectroscopy with the goal of single-defect sensitivity in the electrical signal. Simultaneously, the transparent graphene electrodes allow optical access to the very same defect, on which we will perform spectroscopy in the visible and infrared spectral range. We expect via the combined electrical and optical control as well as the electrical and optical characterization at the very same colour center a deep understanding of the excitation spectra. This refined methodology of defect analysis has significant importance for electrical SiC device developments. It further offers an opportunity to build single-photon sources with electrical control in this powerful and mature material system, which paves the way, for example, for highly sensitive sensors.

Publications

  • Rühl M., Ott C., Götzinger S., Krieger M., Weber HB.:
    Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing
    In: Applied Physics Letters 113 (2018), p. 122102
    ISSN: 0003-6951
    DOI: 10.1063/1.5045859
    BibTeX: Download
  • Rühl M., Bergmann L., Krieger M., Weber HB.:
    Stark Tuning of the Silicon Vacancy in Silicon Carbide
    In: Nano Letters 20 (2020), p. 658-663
    ISSN: 1530-6984
    DOI: 10.1021/acs.nanolett.9b04419
    URL: https://pubs.acs.org/doi/10.1021/acs.nanolett.9b04419
    BibTeX: Download
  • Kobayashi T., Rühl M., Lehmeyer J., Zimmermann L., Krieger M., Weber HB.:
    Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing
    In: Journal of Physics D-Applied Physics 55 (2021), Article No.: 105303
    ISSN: 0022-3727
    DOI: 10.1088/1361-6463/ac3a49
    URL: http://iopscience.iop.org/article/10.1088/1361-6463/ac3a49
    BibTeX: Download
Lehrstuhl für Angewandte Physik
Friedrich-Alexander-Universität Erlangen-Nürnberg

Staudtstr. 7 / Bau A3
91058 Erlangen
Germany
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