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  1. Friedrich-Alexander-Universität
  2. Faculty of Sciences
  3. Department of Physics
Friedrich-Alexander-Universität Chair of Applied Physics
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  4. Point defects in silicon carbide: Towards a platform for the coupling of light, spin and mechanics (B03)

Point defects in silicon carbide: Towards a platform for the coupling of light, spin and mechanics (B03)

In page navigation: Research (Weber)
  • Silicon carbide and Epitaxial Graphene: Electronic Properties
    • Monolithic electronic circuits based on epitaxial graphene
    • Promoting and structuring a Multidisciplinary Academic-Industrial Network through the heteropolytype growth, characterisation and applications of 3C-SiC on hexagonal substrates
    • Graphene on SiC: Fabrication, electronic structure and transistor applications
    • Interaction effects and gateless patterning in epitaxial graphene on silicon carbide (0001)
    • Training NETwork on Functional Interfaces for SiC
  • Silicon Carbide and Epitaxial Graphene: Light/Matter Interfaces
    • Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene
    • Point defects in silicon carbide: Towards a platform for the coupling of light, spin and mechanics (B03)
  • Molecular Materials: Electronic Properties
    • Graphene and Organic Molecules: Transport Experiments (B08)
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  • Molecular Materials: Light/Matter Interface
    • Graphene and Organic Molecules: Transport Experiments (B08)
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Point defects in silicon carbide: Towards a platform for the coupling of light, spin and mechanics (B03)

Point defects in silicon carbide: Towards a platform for the coupling of light, spin and mechanics (B03)

(Third Party Funds Group – Sub project)

Overall project: TRR 306: Quantum Cooperativity of Light and Matter – QuCoLiMa
Project leader: Heiko B. Weber
Project members:
Start date: January 1, 2021
End date: December 31, 2024
Acronym:
Funding source: DFG / Sonderforschungsbereich / Transregio (SFB / TRR)
URL:

Abstract

Individual point defects in solids are stable quantum systems often providing coherent electron spins and stable emission of single photons. Point defects in silicon carbide combine these advantages with a technologically mature semiconductor material platform. However, the solid-state environment leads to significant spreads in the transition frequencies of individual defects which mostly hinders observing cooperative effects. In this project, we address this challenge theoretically as well as experimentally via modeling point defects and incorporating them into photonic and nanomechanical structures allowing to couple multiple defects combined with methods to individually tune the point defect’s transition frequency.

Publications

  • Rühl M., Lehmeyer J., Nagy R., Weißer M., Bockstedte M., Krieger M., Weber HB.:
    Removing the orientational degeneracy of the TS defect in 4H-SiC by electric fields and strain
    In: New Journal of Physics 23 (2021), Article No.: 073002
    ISSN: 1367-2630
    DOI: 10.1088/1367-2630/abfb3e
    URL: https://iopscience.iop.org/article/10.1088/1367-2630/abfb3e
    BibTeX: Download
Lehrstuhl für Angewandte Physik
Friedrich-Alexander-Universität Erlangen-Nürnberg

Staudtstr. 7 / Bau A3
91058 Erlangen
Germany
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