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  1. Friedrich-Alexander-Universität
  2. Faculty of Sciences
  3. Department of Physics
Friedrich-Alexander-Universität Chair of Applied Physics
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Monolithic electronic circuits based on epitaxial graphene

In page navigation: Research (Weber)
  • Silicon carbide and Epitaxial Graphene: Electronic Properties
    • Monolithic electronic circuits based on epitaxial graphene
    • Promoting and structuring a Multidisciplinary Academic-Industrial Network through the heteropolytype growth, characterisation and applications of 3C-SiC on hexagonal substrates
    • Graphene on SiC: Fabrication, electronic structure and transistor applications
    • Interaction effects and gateless patterning in epitaxial graphene on silicon carbide (0001)
    • Training NETwork on Functional Interfaces for SiC
  • Silicon Carbide and Epitaxial Graphene: Light/Matter Interfaces
    • Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene
    • Point defects in silicon carbide: Towards a platform for the coupling of light, spin and mechanics (B03)
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Monolithic electronic circuits based on epitaxial graphene

Monolithic electronic circuits based on epitaxial graphene

(Third Party Funds Single)

Overall project:
Project leader: Heiko B. Weber
Project members: Michael Krieger
Start date: December 1, 2013
End date:
Acronym:
Funding source: DFG-Einzelförderung / Sachbeihilfe (EIN-SBH)
URL:

Abstract

We propose a concept to build electronic devices and circuits employing the material system "epitaxial graphene on SiC". This material system consists of graphene, silicon carbide, and the epitaxially defined interface in between. We have already demonstrated the functionality of a single transistor that used the semiconductor as channel and consequently displayed excellent on/off ratios, in contrast to pure graphene transistors. Moreover, the usage of graphene as contact material delivers superior ohmic contacts compared to state-of-the-art metal contacts to SiC. We see a way to establish electrical circuits using this transistor principle, which may be used as switches, analog circuits, and digital circuits, up to a full logic. Metallic interconnects are not required. These devices are simple to fabricate and may operate side-by-side on the same chip to existing concepts like graphene 100 GHz amplification and SiC power transistors. Due to favorable material properties, these circuits are expected to operate at elevated temperatures and at high frequencies and may provide access to novel applications and experiments. Graphene contacts are also well suited to shed new light on the Schottky interface in SiC because it allows for access to pinholes etc. from the top using local probes. Moreover, the system follows a very unusual design principle, in which the patterned two-dimensional material layer defines the properties of the entire system. We anticipate that the presented concept serves as a blueprint for further electronic circuits employing two-dimensional materials.

Publications

  • Hertel S., Krieger M., Weber HB.:
    Monolithic circuits with epitaxial graphene/silicon carbide transistors
    In: Physica Status Solidi 8 (2014), p. 688-691
    ISSN: 0031-8957
    DOI: 10.1002/pssr.201409171
    BibTeX: Download
  • Hertel S., Waldmann D., Jobst J., Albert A., Albrecht M., Krieger M., Reshanov S., Schöner A., Weber HB.:
    Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics
    In: Nature Communications 3 (2012), p. 957
    ISSN: 2041-1723
    DOI: 10.1038/ncomms1955
    BibTeX: Download
  • Sorger C., Hertel S., Jobst J., Steiner C., Meil K., Ullmann K., Albert A., Wang Y., Krieger M., Ristein J., Maier S., Weber HB.:
    Gateless patterning of epitaxial graphene by local intercalation
    In: Nanotechnology 26 (2015), p. 025302
    ISSN: 1361-6528
    DOI: 10.1088/0957-4484/26/2/025302
    BibTeX: Download
  • Krieger M., Weber HB.:
    Epitaxial Graphene on silicon carbide as a tailorable metal-semiconductor interface
    In: Peter Wellmann, Noboru Ohtani, Roland Rupp (ed.): Wide Bandgap Semiconductors for Power Electronics, Weinheim: Wiley VCH, 2021, p. 249 - 270
    ISBN: 978-3-527-34671-4

    BibTeX: Download
Lehrstuhl für Angewandte Physik
Friedrich-Alexander-Universität Erlangen-Nürnberg

Staudtstr. 7 / Bau A3
91058 Erlangen
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