Symposium Silicon Carbide as Quantum-Classical Platform

Symposium
Silicon Carbide as Quantum-Classical Platform
75th Anniversary of the Chair of Applied Physics

Erlangen, Germany
September 14-15, 2023

Silicon carbide (SiC) has developed into a high-performance semiconductor technology in recent years. This goes hand in hand with excellent monocrystalline wafer material and continuously improving process technology as well as understanding of SiC’s fundamental material and device physics. However, SiC and its derived materials, epitaxial graphene and SiC’s point defects, have much more to offer: Due to unrivaled material parameters, SiC has also the potential for unprecedented functionalities in the realm of photonics on a chip, highest-Q mechanics and quantum-technology oriented spin physics. This vast design space, which opens up scope for new experiments and technologies, is yet to be explored.

In this scientific symposium, we will pick up this trail and discuss the possibilities of combining electronics, optics, mechanics and spin physics to create a platform for combined quantum and classical functionality.

The symposium simultaneously celebrates the 75th anniversary of FAU’s Chair of Applied Physics with its significant and long-lasting contribution to the development of today’s SiC material platform and technology.

Thank you for joining us for the Symposium on Silicon Carbide as a Quantum Classical Platform on the occasion of the 75th anniversary of the Chair of Applied Physics!

Invited speakers

  • Michel Bockstedte, Johannes Kepler Universität Linz, Austria:
    Color centers in a glister of a gem stone: a theoretical perspective on defects in SiC from doping to quantum applications
  • Robert Cernansky, Universität Ulm, Germany:
    Silicon Carbide as a platform for integrated nanophotonic components
  • Wolfgang J. Choyke (Professor Emeritus), University of Pittsburgh, USA:
    A snapshot of SiC history from before the creation of the solar system to the early nineteen seventies
  • Ralph Claessen, Julius-Maximilians-Universität Würzburg, Germany:
    Atomic monolayers on SiC as 2D quantum materials
  • Peter Friedrichs, Infineon Technologies AG, Germany/Austria:
    Transition to green energy – The role of SiC based components in power electronics
  • Tsunenobu Kimoto, Kyoto University, Japan:
    High-field phenomena in SiC material and devices
  • Robert Leonard, Wolfspeed, USA:
    Bulk Growth and Characterization of SiC for Power and Semi-insulating Substrates
  • Hiroyuki Matsunami (Professor Emeritus), Kyoto University, Japan:
    Long history of research and development of SiC for real application of power devices
  • Roland Nagy, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Germany:
    Applications of color centers in 4H-SiC
  • Takeshi Ohshima, National Institutes for Quantum Science and Technology, Japan:
    Sensing in SiC devices using silicon vacancy created by particle beam writing technique
  • Eva Weig, Technische Universität München, Germany:
    Silicon carbide as a material for high Q nanomechanical systems
  • Jörg Wrachtrup, Universität Stuttgart, Germany:
    Spin and photonic quantum technology with defects in SiC