Silicon Carbide and Epitaxial Graphene: Light/Matter Interfaces

Untersuchungen von Farbzentren im elektrischen Feld

We have been working for many years with the semiconductor material silicon carbide (SiC) and with epitaxial graphene on its surface. This material system has ideal properties to enable conceptually new interfaces between light and matter. Examples of the questions we are working on are: Can we develop devices for light-driven electronics? Can we build devices that are sensitive in the Terahertz (THz) spectral range? Can we harness single point defects in SiC for quantum communication and quantum sensing? Can we develop SiC into a technology platform for quantum technology?

Projects

Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene

Term: since April 1, 2017
Funding source: Deutsche Forschungsgemeinschaft (DFG)
Project leader: Heiko B. Weber

The proposal targets the simultaneous electrical and optical characterization of colour centers, in particular intrinsic defects, in Silicon carbide (SiC). For their targeted generation we develop a methodology that combines ion implantation and optimized annealing such that smallest defect concentrations underneath the SiC (0001) surface can be reached with the ultimate goal of access to single defects. The (0001) surface will be equipped with epitaxially grown electrodes, such that a space charge…

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Participating Scientists

• Kai Phillip Schmidt
• Maria Chekhova
• Stephan Götzinger
• Roland Nagy
• Michael Hartmann
• Martin Vossiek
• Robert Weigel
• Heiko B. Weber
• Joachim von Zanthier
• Michael Krieger

Publications

• Schlecht MT., Knorr M., Schmid C., Malzer S., Huber R., Weber HB.:
  Light-field–driven electronics in the mid-infrared regime: Schottky rectification
  In: Science Advances 8 (2022), Article No.: eabj5014
  ISSN: 2375-2548
  DOI: 10.1126/sciadv.abj5014
  URL: https://www.science.org/doi/10.1126/sciadv.abj5014
  BibTeX: Download
• Boolakee T., Heide C., Garzón-Ramírez A., Weber HB., Franco I., Hommelhoff P.:
  Light-field control of real and virtual charge carriers
  In: Nature 605 (2022), p. 251–255
  ISSN: 0028-0836
  DOI: 10.1038/s41586-022-04565-9
  URL: https://www.nature.com/articles/s41586-022-04565-9
  BibTeX: Download
• Rühl M., Bergmann L., Krieger M., Weber HB.:
  Stark Tuning of the Silicon Vacancy in Silicon Carbide
  In: Nano Letters 20 (2020), p. 658-663
  ISSN: 1530-6984
  DOI: 10.1021/acs.nanolett.9b04419
  URL: https://pubs.acs.org/doi/10.1021/acs.nanolett.9b04419
  BibTeX: Download
• Heide C., Hauck M., Higuchi T., Ristein J., Ley L., Weber HB., Hommelhoff P.:
  Attosecond-fast internal photoemission
  In: Nature Photonics 14 (2020), p. 219–222
  ISSN: 1749-4885
  DOI: 10.1038/s41566-019-0580-6
  URL: https://arxiv.org/abs/2001.02989
  BibTeX: Download
• Schlecht MT., Malzer S., Preu S., Weber HB.:
  An efficient Terahertz rectifier on the graphene/SiC materials platform
  In: Scientific Reports 9 (2019), Article No.: 11205
  ISSN: 2045-2322
  DOI: 10.1038/s41598-019-47606-6
  URL: https://www.nature.com/articles/s41598-019-47606-6
  BibTeX: Download