Highlights on international stage
At the international conference for silicon carbide and related materials (ICSCRM 2017) in Washington D.C., our PhD students Maximilian Rühl and Martin Hauck impressed scientists from academia and industry from all over the world with their research results.
Maximilian Rühl got an invited talk for his contribution by the technical program committee. During his 30 min talk, he presented results on the generation of color centers in silicon carbide by proton irradiation, which aroused the interest of the audience.
Martin Hauck’s novel method for a more precise evaluation of current-voltage characteristics of silicon carbide field effect transistors (so called MOSFETs) was mentioned as a conference highlight during the closing session.